D403 Mosfet

Type Designator: AOD403

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Dual, P-channel, MOSFETs manufactured by Vishay, a global leader for semiconductors and passive electronic components. The depletion MOSFET with adjusted drain current powers up the IC. If the voltage delivered by the auxiliary winding is high enough the NPN transistor is triggered, pulling down the gate of the depletion MOSFET below its threshold voltage and switching it completely off. Example: The depletion MOSFET BSS126 (600 V, 700 Ω, SOT-23) is a good choice. D403 Datasheet, PDF. Search Partnumber: End with 'D403' - Total: 12 ( 1/1 Page) Electronic Manufacturer. Electronics Description. AOD403 AOI403 D403 I403 403 Power MOSFET TO-252 ₱400.00 Brand new 30V P-Channel MOSFET The AOD403/AOI403 uses advanced trench technology to provide excellent RDS(ON.

Maximum Power Dissipation (Pd): 90 W

Abstract: D403 transistor zener diode c602 D201B TRANSISTOR NPN D400 D403 transistor D400 pin diagram mosfet D403 transistor D400 diagram transistor D400 pin OUT Text: high-voltage cascode MOSFET to support supply voltages up to 250 V. The switching frequency automatically, D401B, D501B, D601B D103, D203, D303, D403.

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 70 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 51 nC

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 585 pF

Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package: TO-252

AOD403 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AOD403 Datasheet (PDF)

0.1. aod403 aoi403.pdf Size:398K _aosemi

AOD403/AOI40330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOD403/AOI403 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and low gate ID (at VGS= -20V) -70Aresistance. With the excellent thermal resistance of the RDS(ON) (at VGS= -20V)

0.2. aod403.pdf Size:398K _aosemi

0.3. aod403.pdf Size:241K _inchange_semiconductor

INCHANGE SemiconductorIsc P-Channel MOSFET Transistor AOD403FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor contorlDC-DC conventersABSOLUTE MAXIMUM RATINGS(T =2

Datasheet: AOD2N100, AOD2N60, AOD2N60A, AOD3N40, AOD3N50, AOD3N60, AOD3N80, AOD3T40P, 2SK1058, AOD407, AOD409, AOD4102, AOD4120, AOD4124, AOD4126, AOD4128, AOD4130.

Transistor Mosfet D403

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Type Designator: AO4423

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 3.1 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.6 V

Maximum Drain Current |Id|: 17 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 47 nC

Rise Time (tr): 8 nS

D403 Mosfet

Drain-Source Capacitance (Cd): 583 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0072 Ohm

Package: SO-8

AO4423 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AO4423 Datasheet (PDF)

0.1. ao4423.pdf Size:288K _aosemi

AO442330V P-Channel MOSFETGeneral Description Product SummaryThe AO4423 uses advanced trench technology to provide VDS (V) = -30Vexcellent RDS(ON), and ultra-low low gate charge with a ID = -17A (VGS = -20V)25V gate rating. This device is suitable for use as a load RDS(ON)

0.2. ao4423.pdf Size:1468K _kexin

SMD Type MOSFETP-Channel MOSFETAO4423 (KO4423)SOP-8 Features VDS (V) =-30V ID =-15 A (VGS =-20V) RDS(ON) 7m (VGS =-20V)1.50 0.15 RDS(ON) 8.5m (VGS =-10V) RDS(ON) 12 m (VGS =- 6 V)1 Source 5 Drain ESD Rating: 3000V HBM6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Par

9.1. ao4420a.pdf Size:165K _aosemi

AO4420A30V N-Channel MOSFETGeneral Description Product SummaryThe AO4420A uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunityID = 13.7A (VGS = 10V)and body diode characteristics. This device isRDS(ON)

9.2. ao4425.pdf Size:168K _aosemi

AO442538V P-Channel MOSFETGeneral Description Product SummaryThe AO4425 uses advanced trench technology to VDS (V) = -38Vprovide excellent RDS(ON), and ultra-low low gateID = -14A (VGS = -20V)charge with a 25V gate rating. This device is suitableRDS(ON)

9.3. ao4427.pdf Size:169K _aosemi

AO442730V P-Channel MOSFETGeneral Description Product SummaryThe AO4427 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON), and ultra-low low gateID = -12.5 A (VGS = -20V)charge with a 25V gate rating. This device is suitableRDS(ON)

9.4. ao4421.pdf Size:156K _aosemi

AO442160V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO4421 combines advanced trench MOSFET -60Vtechnology with a low resistance package to provide ID (at VGS=-10V) -6.2Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

9.5. ao4420.pdf Size:165K _aosemi

AO442030V N-Channel MOSFETGeneral Description Product SummaryThe AO4420 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunityID = 13.7A (VGS = 10V)and body diode characteristics. This device isRDS(ON)

9.6. ao4425.pdf Size:1461K _kexin

SMD Type MOSFETP-Channel MOSFETAO4425 (KO4425)SOP-8 Features VDS (V) =-38V ID =-14 A (VGS =-20V) RDS(ON) 10m (VGS =-20V)1.50 0.15 RDS(ON) 11m (VGS =-10V) ESD Rating: 3000V HBM1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sour

9.7. ao4427.pdf Size:1470K _kexin

SMD Type MOSFETP-Channel MOSFETAO4427 (KO4427)SOP-8 Features VDS (V) =-30V ID =-12.5 A (VGS =-20V) RDS(ON) 12m (VGS =-20V)1.50 0.15 RDS(ON) 14m (VGS =-10V) ESD Rating: 2000V HBM1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-So

9.8. ao4421.pdf Size:1246K _kexin

SMD Type MOSFETP-Channel MOSFETAO4421 (KO4421)SOP-8 Features VDS (V) =-60V ID =-6.2 A (VGS =-10V) RDS(ON) 40m (VGS =-10V)1.50 0.15 RDS(ON) 50m (VGS =-4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gat

D403 Mosfet Price

9.9. ao4420.pdf Size:1448K _kexin

SMD Type MOSFETN-Channel MOSFETAO4420 (KO4420)SOP-8 Features VDS (V) = 30V ID = 13.7 A (VGS = 10V)1.50 0.15 RDS(ON) 10.5m (VGS = 10V) RDS(ON) 12m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V G

Datasheet: AO4409, AO4410, AO4411, AO4413, AO4415, AO4419, AO4420, AO4421, IRFB3306, AO4425, AO4427, AO4430, AO4435, AO4437, AO4438, AO4440, AO4441.

D403 Mosfet Pdf

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